DESCRIPTION

The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance

FEATURES

• High Output Power: P1dB=29.5dBm (Typ.)

• High Gain: G1dB=13.5dB (Typ.)

• High PAE: ηadd=47% (Typ.)

• Proven Reliability

• Hermetically Sealed Package