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STGO30H60DLLFBAG 데이터시트 (PDF) - STMicroelectronics
STGO30H60DLLFBAG Datasheet PDF - STMicroelectronics
부품명 STGO30H60DLLFBAG
다운로드  STGO30H60DLLFBAG 다운로드
파일 크기   1487.47 Kbytes
페이지   15 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

STGO30H60DLLFBAG Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
STGO30H60DLLFBAG Datasheet PDF - STMicroelectronics

부품명 STGO30H60DLLFBAG
다운로드  STGO30H60DLLFBAG Click to download

파일 크기   1487.47 Kbytes
페이지   15 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

STGO30H60DLLFBAG 데이터시트 (HTML) - STMicroelectronics


STGO30H60DLLFBAG 제품 세부 정보

Features
• AEC-Q101 qualified
• Maximum junction temperature: TJ = 175 °C
• Logic level gate drive
• High-speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 30 A
• Low VF soft-recovery co-packaged diode
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.

Applications
• Automotive injection




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