STGO30H60DLLFBAG datasheet(2/15 Pages) STMICROELECTRONICS

부품명	STGO30H60DLLFBAG

상세설명	Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

600

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP(1)

Pulsed collector current

120

VGE

Gate-emitter voltage

±10

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP(1)

Pulsed forward current

120

PTOT

Total power dissipation at TC = 25 °C

263

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

-55 to 175

°C

1. tp<1 μs.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case IGBT

0.57

°C/W

Thermal resistance, junction-to-case diode

1.51

RthJA

Thermal resistance, junction-to-ambient

°C/W

STGO30H60DLLFBAG

Electrical ratings

DS12913 - Rev 4

page 2/15

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