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STGWA80H65FBAG 데이터시트 (PDF) - STMicroelectronics
STGWA80H65FBAG Datasheet PDF - STMicroelectronics
부품명 STGWA80H65FBAG
다운로드  STGWA80H65FBAG 다운로드
파일 크기   257.0 Kbytes
페이지   12 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

STGWA80H65FBAG Datasheet (PDF)

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STGWA80H65FBAG Datasheet PDF - STMicroelectronics

부품명 STGWA80H65FBAG
다운로드  STGWA80H65FBAG Click to download

파일 크기   257.0 Kbytes
페이지   12 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

STGWA80H65FBAG 데이터시트 (HTML) - STMicroelectronics


STGWA80H65FBAG 제품 세부 정보

Features
AEC-Q101 qualified
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
VCE(sat) = 1.65 V (typ.) @ IC = 80 A
Tight parameters distribution
Safer paralleling
Low thermal resistance

Applications
PFC
High frequency converters

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.




유사한 부품 번호 - STGWA80H65FBAG

제조업체부품명데이터시트상세설명
logo
STMicroelectronics		 STGWA80H65FB STMICROELECTRONICS-STGWA80H65FB Datasheet
1Mb / 18P		 Low thermal resistance
13-Jun-2014
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유사한 설명 - STGWA80H65FBAG

제조업체부품명데이터시트상세설명
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STMicroelectronics 에 대하여

Stmicroelectronics는 스위스 제네바에 본사를 둔 다국적 전자 및 반도체 제조업체입니다.

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1987 년에 설립 된 Stmicroelectronics는 100 개 이상의 국가에서 운영되고 있으며 세계에서 가장 큰 반도체 회사 중 하나입니다.

*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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