Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. TO-247 long leads 1 2 3 TO-3P 1 2 3 TAB 1 2 3 Max247 A recent study finds that multilingual individuals tend to have a younger estimated "brain age," with earlier second-language acquisition and higher proficiency leading to a slower brain aging process. TO-247 C (2 or TAB) E (3) G (1)

Features
■ Maximum junction temperature: TJ = 175 °C
■ High speed switching series
■ Minimized tail current
■ VCE(sat) = 1.6 V (typ.) @ IC = 80 A
■ Tight parameter distribution
■ Safe paralleling
■ Low thermal resistance
■ Very fast soft recovery antiparallel diode

Applications
■ Photovoltaic inverters
■ High frequency converters