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GWA40MS120DF4AG 데이터시트 (PDF) - STMicroelectronics
GWA40MS120DF4AG Datasheet PDF - STMicroelectronics
부품명 GWA40MS120DF4AG
다운로드  GWA40MS120DF4AG 다운로드
파일 크기   340.6 Kbytes
페이지   15 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

GWA40MS120DF4AG Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
GWA40MS120DF4AG Datasheet PDF - STMicroelectronics

부품명 GWA40MS120DF4AG
다운로드  GWA40MS120DF4AG Click to download

파일 크기   340.6 Kbytes
페이지   15 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

GWA40MS120DF4AG 데이터시트 (HTML) - STMicroelectronics


GWA40MS120DF4AG 제품 세부 정보

Features
• AEC-Q101 qualified
• 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V,
TJ (start) = 175 °C
• VCE(sat) = 1.95 V (typ.) @ IC = 40 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance

Applications
• Auxiliary loads
• Thermal management
• PTC heaters

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the MS series IGBTs, which represent an
evolution of low-loss M series specifically designed for inverter system thanks to the
outstanding short-circuit capability at high bus voltage value. Furthermore, the slightly
positive VCE(sat) temperature coefficient and very tight parameter distribution result in
safer paralleling operation.




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STMicroelectronics 에 대하여

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*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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