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SCT027W65G3-4AG 데이터시트 (PDF) - STMicroelectronics
SCT027W65G3-4AG Datasheet PDF - STMicroelectronics
부품명 SCT027W65G3-4AG
다운로드  SCT027W65G3-4AG 다운로드
파일 크기   197.44 Kbytes
페이지   12 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package

SCT027W65G3-4AG Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
SCT027W65G3-4AG Datasheet PDF - STMicroelectronics

부품명 SCT027W65G3-4AG
다운로드  SCT027W65G3-4AG Click to download

파일 크기   197.44 Kbytes
페이지   12 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package

SCT027W65G3-4AG 데이터시트 (HTML) - STMicroelectronics


SCT027W65G3-4AG 제품 세부 정보

Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency

Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)

Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with low
capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.




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STMicroelectronics 에 대하여

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*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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