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STBV18200BY4 데이터시트 (PDF) - Innogration Technologies, Inc.

STBV18200BY4 Datasheet PDF - Innogration Technologies, Inc.
부품명 STBV18200BY4
다운로드  STBV18200BY4 다운로드
파일 크기   1638.51 Kbytes
페이지   6 Pages
제조업체  INNOGRATION [Innogration Technologies, Inc.]
홈페이지  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
상세설명 Gallium Nitride 50V, 200W,1.3-1.8GHz RF Power Transistor

STBV18200BY4 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
STBV18200BY4 Datasheet PDF - Innogration Technologies, Inc.

부품명 STBV18200BY4
다운로드  STBV18200BY4 Click to download

파일 크기   1638.51 Kbytes
페이지   6 Pages
제조업체  INNOGRATION [Innogration Technologies, Inc.]
홈페이지  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
상세설명 Gallium Nitride 50V, 200W,1.3-1.8GHz RF Power Transistor

STBV18200BY4 데이터시트 (HTML) - Innogration Technologies, Inc.


STBV18200BY4 제품 세부 정보

Description
The STBV18200BY4 is a 200watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular
applications from 1.3 to 1.8GHz..
It can be configured as asymmetrical Doherty delivering 80W average power, according to normal
8dB back off.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier
 L band power amplifier




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