General Description
The CSP30N75 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
wide variety of applications.

Features
● VDS = 30V,ID =12A
RDS(ON) < 11 mΩ @ VGS =10V
RDS(ON) < 16 mΩ @ VGS =4.5V
● High density cell design for ultra low Rdson
● Lead free product is acquired

Application
● Battery protection
● Load switch
● Power management