CSP30N75

CASS SEMICONDUCTOR CO., LTD

http://www.casssemi.com

V2.0

- 1 -

N

-Channel Trench Power MOSFET

General Description

The CSP30N75 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 4.5V. This device is suitable for use as a

wide variety of applications.

Features

● VDS = 30V,ID =12A

RDS(ON) < 11 mΩ @ VGS =10V

RDS(ON) < 16 mΩ @ VGS =4.5V

● High density cell design for ultra low Rdson

● Lead free product is acquired

Application

●

Battery protection

● Load switch

● Power management

100% UIS TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

CSP30N75

CSP30N75

SOP-8

Ø330mm

12mm

2500 units

Table 1.

Absolute Maximum Ratings (TA=25℃)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage (

VGS=0V）

30

V

VGS

Gate-Source Voltage (

VDS=0V)

±20

V

Drain Current-Continuous(Tc=25℃)

(Note 1)

12

A

ID

Drain Current-Continuous(Tc=100℃)

7.5

A

IDM (pluse)

Drain Current-Continuous@ Current-Pulsed

(Note 2)

48

A

PD

Maximum Power Dissipation

3.5

W

EAS

Avalanche energy

(Note 3)

144

mJ

TJ,TSTG

Operating Junction and Storage Temperature Range

-55 To 150

℃

Table 2.

Thermal Characteristic

Symbol

Parameter

Value

Unit

RJA

Thermal Resistance, Junction-to-Ambient

36

/W

℃

Schematic Diagram

Marking and pin Assignment

SOP-8

top view