The RF Line NPN Silicon High Frequency Transistor
Noise Figure 3.0 dB@ 500MHz

Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

• Low noise figure —
   NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA
• High power gain —
   GU(max) = 16.5 dB (typ.) @ f = 500 MHz
• Ion implanted
• All gold metal system
• High fT — 5.5 GHz
• Low intermodulation distortion:
   TB3 = –70 dB
   DIN = 125 dB V
• Nichrome emitter ballast resistors