The RF Line
NPN Silicon High-Frequency Transistor

. . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

• Low Noise Figure —
   NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA
• High Power Gain —
   GU(max) = 16.5 dB (Typ) @ f = 500 MHz
• Ion Implanted
• All Gold Metal System
• High fT — 5.5 GHz
• Low Intermodulation Distortion:
   TB3 = –70 dB
   DIN = 125 dB µV
• Nichrome Emitter Ballast Resistors