Description
The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications.
This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability.

Main Features
■ 10W output power
■ High gain : > 18dB @ 10GHz
■ High PAE : > 35% @ 10GHz
■ On-chip bias control
■ Linear collector current control
■ High impedance interface for pulse mode
■ Temperature compensated
■ Chip size: 4.74 x 4.36 x 0.1 mm