X-band High Power Amplifier

CHA7010

Ref. : DSCHA70102175 -24-June-02

2/7

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = 25°C, Vc=9V, Vctr=5.5V, Pulse width=80µs , Duty cycle = 30%

Symbol

Parameter

Min

Typ

Max

Unit

F_op

Operating frequency

8.4

9.4

10.4

GHz

G_lin_1

Linear gain (8.4 to 9.4GHz)

14

16

dB

G_lin_2

Linear gain (9.4 to 10.4GHz)

16

18

dB

G_lin_T

Linear gain variation versus temperature

-0.035

dB/°C

RL_in

Input Return Loss

8

12

dB

RL_out

Output Return Loss

6

12

dB

P_sat_1

Saturated output power (8.4 to 9.8GHz)

39

40

dBm

P_sat_2

Saturated output power (9.8 to 10.4GHz)

38

39

dBm

P_sat_T

Saturated output power variation versus

temperature

-0.01

dB/°C

P_1dBc_1

Output power @ 1dBc (8.4 to 9.8GHz)

38

39

dBm

P_1dBc_2

Output power @ 1dBc (9.8 to 10.4GHz)

37

38

dBm

PAE_sat

Power Added Efficiency in saturation

30

35

%

PAE_1dBc

Power Added Efficiency @ 1dBc

27

32

%

Vc

Power supply voltage

9

V

Ic

Power supply quiescent current (1)

2.4

A

Vctr

Collector current control voltage

5.5

V

Zctr

Vctr input port impedance (2)

350

Ohm

Top

Operating temperature range (3)

-30

+80

°C

(1) This parameter is fixed by Vctr

(2) This value corresponds to the 4 ports in parallel (Pin 4, 9, 17, 22)

(3) The reference is the back-side of the chip

Absolute Maximum Ratings (1)

Tamb = 25°C

Symbol

Parameter

Values

Unit

Cmp

Compression level

6

dB

Vc

Power supply voltage

10

V

Ic

Power supply quiescent current

2.8

A

Ic_sat

Power supply current in saturation

3.5

A

Vctr

Collector current control voltage

6.5

V

Tstg

Storage temperature range

-55 to +125

°C

(1)

Operation of this device above anyone of these parameters may cause permanent damage.