The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

FEATURES
■ n - Channel Enhancement Mode
■ Non Punch Through Silicon
■ High Gate Input Impedance
■ Optimised For High Power High Frequency Operation
■ Isolated MMC Base with AlN
■ 1200V Rating
■ 2400A Per Module

APPLICATIONS
■ High Power Switching
■ Motor Control
■ Inverters
■ Traction Drives