Description
The LET9180 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. M246 Epoxy sealed 1-2 Drain 4-5 Gate 3 Source 1 2 4 5

Features
■ Excellent thermal stability
■ Common source configuration push-pull
■ POUT = 180 W with 19 dB gain @ 860 MHz
■ BeO-free package