Description
The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications. M243 epoxy sealed 1 3 2 1. Drain 2. Gate 3. Source

Features
■ Excellent thermal stability
■ Common source configuration
■ POUT (@ 28 V)= 60 W with 13.8 dB gain @ 1600 MHz
■ BeO free package
■ In compliance with the 2002/95/EC European directive