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STC6332 데이터시트 (PDF) - Stanson Technology

부품명	STC6332

상세설명	The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

파일 크기	421.0 Kbytes

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제조업체	STANSON [Stanson Technology]

홈페이지	http://www.stansontech.com

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STC6332 데이터시트 (PDF) - Stanson Technology

유사한 부품 번호 - STC6332

제조업체	부품명	데이터시트	상세설명
Stanson Technology	STC6301D	922Kb / 8P	N&P Pair Enhancement Mode MOSFET
List of Unclassifed Man...	STC6342L	110Kb / 13P	UP Supervisor Circuits
	STC6342M	110Kb / 13P	UP Supervisor Circuits
	STC6342R	110Kb / 13P	UP Supervisor Circuits
	STC6342S	110Kb / 13P	UP Supervisor Circuits

유사한 설명 - STC6332

제조업체	부품명	데이터시트	상세설명
Stanson Technology	ST2315SRG	218Kb / 6P	ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2318SRG	221Kb / 7P	ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	ST2319SRG	229Kb / 8P	ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	ST3400SRG	547Kb / 6P	The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	ST3422A	338Kb / 6P	The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP4407	545Kb / 6P	The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP4435A	311Kb / 6P	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP6308	420Kb / 6P	STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Shenzhen Huazhimei Semi...	HM603BK	938Kb / 8P	N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
Shenzhen Huazhimei Semi...	HM609BK	2Mb / 8P	N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

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