B5817W pdf, B5817W 상세설명, B5817W 데이터시트, B5817W view ::: ALLDATASHEET :::

부품명	B5817W

상세설명	Low stored change,majority carrier conduction.

파일 크기	300.0 Kbytes

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제조업체	GXELECTRONICS [Gaomi Xinghe Electronics Co., Ltd.]

홈페이지	http://www.sddzg.com

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유사한 부품 번호 - B5817W

제조업체	부품명	데이터시트	상세설명
Jiangsu Changjiang Elec...	B5817W	336Kb / 3P	SCHOTTKY BARRIER DIODE
Weitron Technology	B5817W	161Kb / 3P	Surface Mount Schottky Barrier Diodes
TRANSYS Electronics Lim...	B5817W	63Kb / 1P	SCHOTTKY BARRIER DIODE
Galaxy Semi-Conductor H...	B5817W	275Kb / 4P	Schottky Barrier Diode
Silicon Standard Corp.	B5817W	254Kb / 4P	SCHOTTKY BARRIER DIODE

제조업체	부품명	데이터시트	상세설명
Taiwan Semiconductor Co...	MBR20200PT	103Kb / 2P	Metal silicon junction, majority carrier conduction
Gaomi Xinghe Electronic...	MBR1030	377Kb / 2P	Metal of silicon rectifier , majority carrier conduction
Kersemi Electronic Co.,...	MBR10H60	1Mb / 3P	Metal silicon junction, majority carrier conduction
Sangdest Microelectroni...	1N5817W	135Kb / 4P	Metal silicon junction, majority carrier conduction
SHIKUES Electronics	B5817WS	2Mb / 4P	Extremely low, Low stored change, Majority carrier conduction
	BAL99	657Kb / 2P	Extremely low, Low stored change, Majority carrier conduction
	MBR30100C-ST	482Kb / 3P	Trench MOS schottky technology, Low stored charge Majority Carrier Conduction
Shanghai Leiditech Elec...	B5817W	790Kb / 3P	Low stored change,majority carrier conduction.
Shanghai Leiditech Elec...	RB160M-30	587Kb / 3P	Low stored change,majority carrier conduction.
Shenzhen Luguang Electr...	SS345FL	1Mb / 2P	Metal silicon junction, majority carrier conduction