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부품명	PTFB201402FC

상세설명	High Power RF LDMOS Field Effect Transistor

파일 크기	841.14 Kbytes

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제조업체	INFINEON [Infineon Technologies AG]

홈페이지	http://www.infineon.com

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유사한 부품 번호 - PTFB201402FC

제조업체	부품명	데이터시트	상세설명
Cree, Inc	PTFB201402FC	595Kb / 14P	High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	PTF080101	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTFC270101M	409Kb / 21P	High Power RF LDMOS Field Effect Transistor Rev. 04, 2015-04-01
	PXAC243502FV	1Mb / 10P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13
	PTFB183408SV	248Kb / 15P	High Power RF LDMOS Field Effect Transistor Rev. 03, 2014-03-07
Renesas Technology Corp	NEM090303M-28	295Kb / 12P	LDMOS FIELD EFFECT TRANSISTOR 2003
	NEM090603M-28	302Kb / 11P	LDMOS FIELD EFFECT TRANSISTOR 2006
	NEM090853P-28	283Kb / 10P	LDMOS FIELD EFFECT TRANSISTOR 2004
	NEM091203P-28	310Kb / 13P	LDMOS FIELD EFFECT TRANSISTOR 2005
	NEM091603P-28	306Kb / 11P	LDMOS FIELD EFFECT TRANSISTOR 2008
	NEM091803S-28	271Kb / 9P	LDMOS FIELD EFFECT TRANSISTOR 2004