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IRFP150M 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRFP150M 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRFP150M,IIRFP150M ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 100 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=23A 36 mΩ IGSS Gate-Source Leakage Current VGS= ±20V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS=100V; VGS= 0V 25 μ A VSD Diode forward voltage IS=23A, VGS = 0V 1.3 V |
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