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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFP150M 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFP150M 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFP150M，IIRFP150M · FEATURES · Static drain-source on-resistance: RDS(on)≤36mΩ · Enhancement mode: · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Fast switching · Fully Avalanche Rated · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 42 A IDM Drain Current-Single Pulsed 140 A PD Total Dissipation @TC=25℃ 160 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.95 ℃ /W Rth(j-a) Channel-to-ambient thermal resistance 40 ℃ /W |
유사한 부품 번호 - IRFP150M |
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유사한 설명 - IRFP150M |
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