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FDMF6705 데이터시트(PDF) 16 Page - ON Semiconductor |
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FDMF6705 데이터시트(HTML) 16 Page - ON Semiconductor |
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16 / 21 page ![]() © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6705 • Rev. 1.0.4 15 Application Information Supply Capacitor Selection For the supply inputs (VDRV & VCIN), a local ceramic bypass capacitor is required to reduce noise and to supply peak transient currents during gate drive switching action. It is recommended to use a minimum capacitor value of 1 µF X7R or X5R. Keep this capacitor close to the VCIN and VDRV pins and connect it to the GND plane with vias. Bootstrap Circuit The bootstrap circuit uses a charge storage capacitor (CBOOT), as shown in Figure 28. A bootstrap capacitance of 100 nF X7R or X5R capacitor is typically adequate. A series bootstrap resistor would be needed for specific applications to improve switching noise immunity. The boot resistor (RBOOT) may be required when operating near the maximum rated VIN and is effective at controlling the high-side MOSFET turn-on slew rate and VSHW overshoot. Typical RBOOT values from 0.5 Ω to 3.0 Ω are effective in reducing VSWH overshoot for the FDMF6705. VCIN Filter The VDRV pin provides power to the gate drive of the high-side and low-side power MOSFETs. In most cases, VDRV can be connected directly to VCIN, which supplies power to the logic circuitry of the gate driver. For additional noise immunity, an RC filter can be inserted between VDRV and VCIN. Recommended values of 10 Ω (RVCIN) placed between VDRV and VCIN and 1 µF (CVCIN) from VCIN to CGND (see Figure 29). Power Loss and Efficiency Measurement and Calculation Refer to Figure 28 for power loss testing method. Power loss calculations are: PIN=(VIN x IIN) + (V5V x I5V) (W) (1) PSW=VSW x IOUT (W) (2) POUT=VOUT x IOUT (W) (3) PLOSS_MODULE=PIN - PSW (W) (4) PLOSS_BOARD=PIN - POUT (W) (5) EFFMODULE=100 x PSW/PIN (%) (6) EFFBOARD=100 x POUT/PIN (%) (7) Figure 28. Power Loss Measurement Block Diagram Figure 29. Block Diagram with VCIN Filter |
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