2016-03-31

2

Version 1.4

BPW 34

Characteristics (T

Parameter

Symbol

Values

Unit

Operating and storage temperature range

T

-40 ... 100

°C

Reverse voltage

V

R

32

V

Total Power dissipation

P

tot

150

mW

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

V

ESD

2000

V

Parameter

Symbol

Values

Unit

Spectral sensitivity

(typ)

S

80

nA/Ix

Photocurrent

(E

(typ (min))

80 (≥ 50)

µA

Wavelength of max. sensitivity

(typ)

λ

S max

850

nm

Spectral range of sensitivity

(typ)

λ

10%

(typ) 400

... 1100

nm

Radiant sensitive area

(typ)

A

7.02

mm

2

Dimensions of radiant sensitive area

(typ)

L x W

2.65 x 2.65

mm x

mm

Half angle

(typ)

ϕ

± 60

°

Dark current

(V

2 (≤ 30)

nA

Spectral sensitivity of the chip

(λ = 850 nm)

(typ)

S

λ typ

0.62

A / W

Quantum yield of the chip

(λ = 850 nm)

(typ)

η

0.90

Electro

ns

/Photon

Open-circuit voltage

(E

(typ (min))

365 (≥ 300)

mV

Short-circuit current

(E

(typ)

I

SC

80

µA

Rise and fall time

(typ)

t

0.02

µs

Forward voltage

(typ)

1.3

V

Capacitance

(V

(typ)

72

pF

Temperature coefficient of V

O

(typ)

TC

V

-2.6

mV / K