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BC847BFAQ 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 BC847BFAQ
상세설명  45V NPN SMALL SIGNAL TRANSISTOR
PDF  7 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BC847BFAQ 데이터시트(HTML) 4 Page - Diodes Incorporated

  BC847BFAQ Datasheet HTML 1Page - Diodes Incorporated BC847BFAQ Datasheet HTML 2Page - Diodes Incorporated BC847BFAQ Datasheet HTML 3Page - Diodes Incorporated BC847BFAQ Datasheet HTML 4Page - Diodes Incorporated BC847BFAQ Datasheet HTML 5Page - Diodes Incorporated BC847BFAQ Datasheet HTML 6Page - Diodes Incorporated BC847BFAQ Datasheet HTML 7Page - Diodes Incorporated  
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BC847BFAQ
Document number: DS38755 Rev. 1 - 2
4 of 7
www.diodes.com
May 2016
© Diodes Incorporated
BC847BFAQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typical
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
50
150
V
IC = 50µA, IB = 0
Collector-Emitter Breakdown Voltage
BVCES
50
150

IC = 50µA, IB = 0
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
45
65
V
IC = 1mA, IB = 0
Collector-Base Breakdown Voltage
BVEBO
6.0
8.35
V
IE = 50µA, IC = 0
Collector-Base Cutoff Current
ICBO
15
nA
VCB = 40V
Collector-Emitter Cutoff Current
ICES


15
nA
VCE = 40V
ON CHARACTERISTICS (Note 9)
DC Current Gain
hFE
200
220
260
470
IC = 10µA, VCE = 5.0V
IC = 2.0mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
50
122
125
300
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
760
880
1,000
1,100
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage
VBE(ON)
580
650
725
750
800
mV
IC = 2.0mA, VCE = 5V
IC = 10mA, VCE = 5V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO
1.5
pF
VCB = 10.0V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT
100
170
MHz
VCE = 5V, IC = 10mA,
f = 100MHz
Note:
9. Measured under pulsed conditions. Pulse width
 300µs. Duty cycle  2%.



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