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BC847BFAQ 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 BC847BFAQ
상세설명  45V NPN SMALL SIGNAL TRANSISTOR
PDF  7 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BC847BFAQ 데이터시트(HTML) 2 Page - Diodes Incorporated

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BC847BFAQ
Document number: DS38755 Rev. 1 - 2
2 of 7
www.diodes.com
May 2016
© Diodes Incorporated
BC847BFAQ
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
100
mA
Peak Pulse Collector Current
ICM
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
435
mW
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
287
°C/W
Thermal Resistance, Junction to Lead (Note 8)
RθJL
150
°C/W
Operating and Storage and Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge
– Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge
– Machine Model
ESD MM
200
V
B
Notes:
6. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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