28F032B3 datasheet(22/48 Pages) INTEL

부품명	28F032B3

상세설명	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

PDF	48 Pages

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제조업체	INTEL [Intel Corporation]

홈페이지	http://www.intel.com

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22 / 48 page

SMART 3 ADVANCED BOOT BLOCK

PRELIMINARY

After any program or block erase operation is

complete (even after VPP transitions down to

VPPLK), the CUI must be reset to read array mode

via the Read Array command if access to the flash

memory array is desired.

3.7

Power Supply Decoupling

Flash memory’s power switching characteristics

require

careful

device

decoupling.

System

designers should consider three supply current

issues:

Standby current levels (ICCS)

Read current levels (ICCR)

Transient peaks produced by falling and rising

edges of CE#.

Transient current magnitudes depend on the device

outputs’ capacitive and inductive loading. Two-line

control and proper decoupling capacitor selection

will suppress these transient voltage peaks. Each

flash device should have a 0.1 µF ceramic

capacitor connected between each VCC and GND,

and between its VPP and GND. These high-

frequency,

inherently

low-inductance

capacitors

should be placed as close as possible to the

package leads.

28F032B3 데이터시트(PDF) 22 Page - Intel Corporation