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MMBD352W 데이터시트(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

부품명 MMBD352W
상세설명  Schottky Barrier Diode
PDF  3 Pages
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제조업체  BILIN [Galaxy Semi-Conductor Holdings Limited]
홈페이지  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

MMBD352W 데이터시트(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
Schottky Barrier Diode
MMBD352W
F070
www.gmesemi.com
Rev.A
1
FEATURES
Very low capacitance-less than 1.0Pf
@zero volts.
Low forward voltage-0.5 Voltage(Typ.)
@IF=10mA.
APPLICATIONS
For UHF mixer applications.
SOT-323
ORDERING INFORMATION
Type No.
Marking
Package Code
MMBD352W
M5
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Continuous reverse voltage
VR
7.0
V
Power Dissipation
Pd
200
mW
Thermal resistance junction-to-ambient
RθJA
625
Junction temperature
Tj
150
℃
Storage temperature range
Tstg
-55 to +150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test
conditions
MIN
Typ.
MAX
UNIT
Reverse current
IR
VR=3V
VR=7V
0.25
10
μA
Forward voltage
VF
IF=10mA
0.60
V
Diode capacitance
CD
VR=0V, f=1MHz
1.0
pF
Pb
Lead-free


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