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STR710FZ1H6 데이터시트(PDF) 37 Page - STMicroelectronics |
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STR710FZ1H6 데이터시트(HTML) 37 Page - STMicroelectronics |
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37 / 49 page ![]() STR71xF - ELECTRICAL CHARACTERISTICS 37/49 2.9 Flash Electrical characteristics V33 = 3.3 ± 10%, TA = -40 / 85 °C unless otherwise specified. Table 19. Flash Program/Erase Characteristics 1 Note C0: TA = 85 °C after 0 cycles Cmax: TA = 85 °C after max number of cycles Table 20. Flash Program/Erase Characteristics 2 Symbol Parameter Test Conditions Value Unit Typ Max(C0) Max(Cmax) tPW Word Program 40 µs tPDW Double Word Program 60 µs tPB0 Bank 0 Program (256K) Double Word Program 1.6 2.1 4.3 s tPB1 Bank 1 Program (16K) Double Word Program 130 170 300 ms tES Sector Erase (64K) Not preprogrammed Preprogrammed 2.3 1.9 4.0 3.3 4.9 4.1 s tES Sector Erase (8K) Not preprogrammed Preprogrammed 0.7 0.6 1.1 1.0 1.36 1.26 s tES Bank 0 Erase (256K) Not preprogrammed Preprogrammed 8.0 6.6 13.7 11.2 17.2 14.0 s tES Bank 1 Erase (16K) Not preprogrammed Preprogrammed 0.9 0.8 1.5 1.3 1.87 1.66 s tRPD Recovery from Power-Down 20 µs tPSL Program Suspend Latency 10 µs tESL Erase Suspend Latency 300 µs Symbol Parameter Conditions Value Unit Min Typ Max Endurance 10 kcycles Endurance (Bank1 sectors) 100 kcycles Data Retention 20 Years tESR Erase Suspend Rate Min time from Erase Resume to next Erase Suspend 20 ms |
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