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EL7571 데이터시트(PDF) 11 Page - Renesas Technology Corp |
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EL7571 데이터시트(HTML) 11 Page - Renesas Technology Corp |
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11 / 19 page ![]() EL7571 FN7298 Rev 1.00 Page 11 of 19 October 25, 2004 Skottky Diode, D2 In the non-synchronous scheme a flyback diode is required to provide a current path to the output when the high side power MOSFET, Q1, is switched off. The critical criteria for selecting D2 is that it must have low forward voltage drop. The product of forward voltage drop and condition current is a primary source of power dissipation in the convertor. The Schottky diode selected is the International Rectifier 32CTQ030 which has 0.4V of forward voltage drop at 15A. Block Diagram MANUFACTURER MODEL VGS RON (MAX) CGS ID VDS PACKAGE MegaMos Mi4410 4.5V 20m 6.4nF ±10A 30V SO-8 MegaMos Mip30N03A 4.5V 22m 6.3nF ±15A 30V TO-220 Siliconix Si4410 4.5V 20m 4.3nF ±10A 30V SO-8 Fuji 2SK1388 4V 37m ±17.5A TO-220 IR IRF3205S 4 8m 17nF (max) ±98A 55V D2Pak Motorola MTB75N05HD 4 7m 7.1nF ±75A 50V TO-220 - + - + Reference DAC Ramp Control Oscillator - + - + - + - + - + - + PWM Control Logic L2 C1 3mF 4.5V to 12.6V 1.5µH 240pF 220pF VID (0:4) 3.5V 4V UVLO HI UVLO LOW ENABLE 0.1µF In Regulation Current Reversal Soft Start ENABLE 5.1µH L1 7.5m C2 6mF VOUT 0.1µF COSC CSLOPE VIN OTEN REF FB PWRGD VINP VHI LX HSD LSD GNDP GND CS |
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