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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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S29CD032G 데이터시트(PDF) 80 Page - SPANSION |
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S29CD032G 데이터시트(HTML) 80 Page - SPANSION |
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80 / 93 page  80 S29CD032G 30606B0 March 22, 2004 Ad va n c e In f o rm a t i o n AC Characteristics Erase/Program Operations Notes: 1. Not 100% tested. 2. See the section for more information. Parameter All Speed Options JEDEC Std. Description Unit tAVAV tWC Write Cycle Time (Note 1) Min 85 ns tAVWL tAS Address Setup Time Min 5 ns tWLAX tAH Address Hold Time Min 28 ns tDVWH tDS Data Setup to WE# Rising Edge Min 18 ns tWHDX tDH Data Hold from WE# Rising Edge Min 2 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 8 ns tWHEH tCH CE# Hold Time Min 8 ns tWLWH tWP WE# Width Min 22 ns tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Double-Word Typ 18 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1.0 sec. tVCS VCC Setup Time (Note 1) Min 50 µs tRB Recovery Time from RY/BY# Min 0 ns tBUSY RY/BY# Delay After WE# Rising Edge Max 90 ns tWPWS WP# Setup to WE# Rising Edge with Command Min 20 ns tWPRH WP# Hold after RY/BY# Rising Edge Max 2 ns |
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