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FS75R07N2E4 데이터시트(PDF) 3 Page - Infineon Technologies AG

부품명 FS75R07N2E4
상세설명  EconoPACK2 Modul mit Trench
PDF  9 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FS75R07N2E4 데이터시트(HTML) 3 Page - Infineon Technologies AG

  FS75R07N2E4 Datasheet HTML 1Page - Infineon Technologies AG FS75R07N2E4 Datasheet HTML 2Page - Infineon Technologies AG FS75R07N2E4 Datasheet HTML 3Page - Infineon Technologies AG FS75R07N2E4 Datasheet HTML 4Page - Infineon Technologies AG FS75R07N2E4 Datasheet HTML 5Page - Infineon Technologies AG FS75R07N2E4 Datasheet HTML 6Page - Infineon Technologies AG FS75R07N2E4 Datasheet HTML 7Page - Infineon Technologies AG FS75R07N2E4 Datasheet HTML 8Page - Infineon Technologies AG FS75R07N2E4 Datasheet HTML 9Page - Infineon Technologies AG  
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TechnischeInformation/TechnicalInformation
FS75R07N2E4
IGBT-Module
IGBT-modules
preparedby:AS
approvedby:RS
dateofpublication:2013-11-06
revision:2.0
VorläufigeDaten
PreliminaryData
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM

650
 V
Dauergleichstrom
ContinuousDCforwardcurrent

IF

75
 A
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
IFRM

150
 A
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
I²t

660
610
 A²s
A²s
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Durchlassspannung
Forwardvoltage
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
IF = 75 A, VGE = 0 V
VF
1,55
1,50
1,45
1,95
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 75 A, - diF/dt = 4000 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
IRM

100
115
125

A
A
A
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Sperrverzögerungsladung
Recoveredcharge
IF = 75 A, - diF/dt = 4000 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Qr

3,00
6,00
7,50

µC
µC
µC
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 75 A, - diF/dt = 4000 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Erec

0,95
1,50
1,85

mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
RthJC


0,95
K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proDiode/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH

0,31
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

Tvj op
-40

150
°C
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Nennwiderstand
Ratedresistance
TC = 25°C
R25

5,00

k
Ω
AbweichungvonR100
DeviationofR100
TC = 100°C, R100 = 493
Ω
∆R/R
-5

5
%
Verlustleistung
Powerdissipation
TC = 25°C
P25


20,0
mW
B-Wert
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50

3375

K
B-Wert
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80

3411

K
B-Wert
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100

3433

K
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.



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