MMRF2007N datasheet(3/17 Pages) NXP

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MMRF2007N MMRF2007GN

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 2 — Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current

(VDS =70 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =1.5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Stage 2 — On Characteristics (1)

Gate Threshold Voltage

(VDS =10 Vdc, ID = 320 Adc)

VGS(th)

1.2

2.0

2.7

Vdc

Gate Quiescent Voltage

(VDS =25 Vdc, IDQ2(A+B) = 550 mAdc)

VGS(Q)

—

3.1

—

Vdc

Fixture Gate Quiescent Voltage

(VDD2 =25 Vdc, IDQ2(A+B) = 550 mAdc, Measured in Functional Test)

VGG(Q)

7.6

8.6

9.6

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =3.2 Adc)

VDS(on)

0.1

0.48

1.2

Vdc

Functional Tests (1,2,3) (In Freescale Test Fixture, 50 ohm system) VDD1 =28 Vdc, VDD2 =25 Vdc, IDQ1(A+B) =60 mA, IDQ2(A+B) = 550 mA,

Pout = 35 W Avg., f1 = 939.9 MHz, f2 = 940.1 MHz

Power Gain

Gps

31.5

32.6

36.5

Power Added Efficiency

PAE

40.5

42.1

—

Intermodulation Distortion

IMD

—

–31.3

–29.0

dBc

Typical Performance (1) (In Freescale Test Fixture, 50 ohm system) VDD1 =28 Vdc, VDD2 =25 Vdc, IDQ1(A+B) =60 mA,

IDQ2(A+B) = 550 mA, 850–940 MHz Bandwidth

Characteristic

Symbol

Min

Typ

Max

Unit

Pout @ 1 dB Compression Point, CW

P1dB

—

IMD Symmetry @ 71 W PEP, Pout where IMD Third Order Intermodulation

 30 dBc

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

IMDsym

—

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

MHz

Quiescent Current Accuracy over Temperature

Stage 1

with 8.25 k Gate Feed Resistors (–30 to 85C) (4)

Stage 2

IQT

—

5.03

4.61

—

Gain Flatness in 90 MHz Bandwidth @ Pout =35 W Avg.

—

1.2

—

Gain Variation over Temperature

(–30Cto+85C)

G

—

0.03

—

dB/C

Output Power Variation over Temperature

(–30Cto+85C)

P1dB

—

0.005

—

dB/C

Table 6. Ordering Information

Device

Tape and Reel Information

Package

MMRF2007NR1

R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel

TO--270WBL--16

MMRF2007GNR1

TO--270WBLG--16

1. Side A and Side B are tied together for this measurement.

2. Part internally matched both on input and output.

3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing

(GN) parts.

4. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.

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