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MMRF2007N 데이터시트(PDF) 1 Page - NXP Semiconductors |
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MMRF2007N 데이터시트(HTML) 1 Page - NXP Semiconductors |
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1 / 17 page ![]() MMRF2007N MMRF2007GN 1 RF Device Data Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MMRF2007N wideband integrated circuit is designed with on--chip pre--matching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 V operation, has a 2--stage design with off--chip matching for the input and covers all typical modulation formats. This device is ideal for use in military and commercial VHF and UHF radio base station or radar driver applications. Typical Two--Tone Performance: VDD1 =28 Vdc,VDD2 =25 Vdc, IDQ1(A+B) =60 mA, IDQ2(A+B) = 550 mA, Pout =35 W Avg. Frequency Gps (dB) PAE (%) IMD (dBc) 850 MHz 30.6 40.1 –30.5 900 MHz 31.9 42.4 –31.0 940 MHz 32.6 42.1 –31.3 Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 W CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features Characterized with series equivalent large--signal impedance parameters and common source S--parameters On--chip prematching. On--chip stabilization. Integrated quiescent current temperature compensation with enable/disable function (1) Integrated ESD protection Figure 1. Functional Block Diagram Figure 2. Pin Connections Note: Exposed backside of the package is the source terminal for the transistors. RFin2A GND RFout2A/ VD2A 2 3 4 5 8 9 16 10 11 12 RFout1A/VD1A GND VG1A RFout2B/ VD2B 15 7 13 (Top View) 6 1 14 RFin2A RFin1A RFout2A/VD2A RFout2B/VD2B RFout1A/VD1A VG1A VG2A RFout1B/VD1B VG1B RFin1B VG2B RFin2B Quiescent Current Temperature Compensation (1) Quiescent Current Temperature Compensation (1) RFin1A VG2A VG2B RFin1B VG1B GND GND RFout1B/VD1B RFin2B 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987. Document Number: MMRF2007N Rev. 0, 6/2015 Freescale Semiconductor Technical Data 136–940 MHz, 35 W AVG., 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS MMRF2007N MMRF2007GN TO--270WBL--16 PLASTIC MMRF2007N TO--270WBLG--16 PLASTIC MMRF2007GN Freescale Semiconductor, Inc., 2015. All rights reserved. |
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