FUSB307BMPX datasheet(24/57 Pages) ONSEMI

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FUSB307B

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Table 11.

VBUS MEASUREMENT CHARACTERISTICS

Symbol

Parameter

TA = −40 to +855C

TA = −40 to +1055C (Note 17)

TJ = −40 to +1255C

Unit

Min

Typ

Max

vMDACstepVBUS

VBUS Measure block LSB reported on VBUS_VOLTAGE[9:0]

pMDACVBUS

Accuracy of VBUS Voltage Measurement

TA = −40 to +85°C

±2

TA = +85 to +105°C

(Note 12)

±5

tVBUSsample

Sampling period of VBUS Measurement

vVBUSthr

VBUS threshold at which

VBUS_VAL interrupt is triggered.

Assumes VBUS present detection

is enabled

VDD > VDDGOOD

3.5

4.0

(Note 14)

VDD < VDDGOOD

(Dead Battery)

3.4

4.0

vVBUShys

Hysteresis on VBUS Comparator

vSafe0Vthr

Safe Operating Voltage at “Zero Volts” Threshold

0.8

vSafe0Vhys

vSafe0V Hysteresis

vALARMLSB

LSB of VBUS thresholds for VBUS_SNK_DISCL

VBUS_STOP_DISCL VALARMHCFGL VALARMLCFGL

pALARM

Accuracy of VBUS thresholds for VBUS_SNK_DISCL

VBUS_STOP_DISCL VALARMHCFGL VALARMLCFGL

±5

14. FUSB307BVMPX vVBUSthr (max) = 4.05 V.

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