MHT2000N datasheet(19/21 Pages) NXP

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MHT2000NR1 MHT2000GNR1

RF Device Data

Freescale Semiconductor, Inc.

APPENDIX A

MHT2000NR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA

Figure A--1. MHT2000NR1 Test Circuit Component Layout

C17

VG1

VG2

C10

C11

C12

C16

C13

C14

C15

0.040 x 0.061 Microstrip

Z10

0.020 x 0.050 Microstrip

Z11

0.050 x 0.050 Microstrip

Z12

0.050 x 0.027 Microstrip

Z13*

0.338 x 0.020 Microstrip

Z14

1.551 x 0.027 Microstrip

PCB

Rogers R04350B, 0.0133, r =3.48

* Line length includes microstrip bends

0.500 x 0.027 Microstrip

0.075 x 0.127 Microstrip

1.640 x 0.027 Microstrip

0.100 x 0.042 Microstrip

0.151 x 0.268 Microstrip

0.025 x 0.268 x 0.056 Taper

0.050 x 0.056 Microstrip

0.356 x 0.056 Microstrip

Table A--1. Electrical Characteristics (TC =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 =77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,

WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR

measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.

Power Gain

Gps

25.5

28.5

30.5

Power Added Efficiency

PAE

—

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

—

Adjacent Channel Power Ratio

ACPR

—

–50

–46

dBc

Input Return Loss

IRL

—

–15

–10

(continued)

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