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MHT2000N 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 MHT2000N
상세설명  RF LDMOS Integrated Power Amplifiers
PDF  21 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

MHT2000N 데이터시트(HTML) 3 Page - NXP Semiconductors

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MHT2000NR1 MHT2000GNR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TC =25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
1
Adc
Gate--Source Leakage Current
(VGS =1.5 Vdc, VDS =0 Vdc)
IGSS
1
Adc
Stage 2 -- On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID =80 Adc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS =28 Vdc, IDQ2 = 195 mAdc) (1)
VGS(Q)
2.7
Vdc
Fixture Gate Quiescent Voltage
(VDD =28 Vdc, IDQ2 = 195 mAdc) (1,2)
VGG(Q)
9.5
10.5
11.5
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID = 800 mAdc)
VDS(on)
0.15
0.47
0.8
Vdc
Stage 2 -- Dynamic Characteristics (3)
Output Capacitance
(VDS =28 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
111
pF
Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture,(1) 50 ohm system) VDD =28 Vdc, IDQ1 =55 mA,
IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz
Power Gain
Gps
25.5
27.7
30.5
dB
Power Added Efficiency
PAE
41.5
43.8
%
Input Return Loss
IRL
–18
–10
dB
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 =77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain
Gps
25.5
28.5
30.5
dB
Power Added Efficiency
PAE
15
17
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
9
dB
Adjacent Channel Power Ratio
ACPR
–50
–46
dBc
Input Return Loss
IRL
–15
–10
dB
1. Measured in Freescale Narrowband Test Fixture.
2. See Appendix A for functional test fixture documentation.
3. Part internally matched both on input and output.
4. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.



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