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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MBM29PL64LM 데이터시트(PDF) 39 Page - SPANSION |
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MBM29PL64LM 데이터시트(HTML) 39 Page - SPANSION |
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39 / 69 page  MBM29PL64LM90/10 38 2. AC Characteristics • Read Only Operations Characteristics * : Test Conditions : Output Load : 1 TTL gate and 30 pF Input rise and fall times : 5 ns Input pulse levels : 0.0 V or VCC Timing measurement reference level Input : VCC / 2 Output : VCC / 2 Parameter Symbols Condition Value* Unit 90 10 JEDEC Standard Min Max Min Max Read Cycle Time tAVAV tRC —90 100 ns Address to Output Delay tAVQV tACC CE = VIL, OE = VIL 90 100 ns Chip Enable to Output Delay tELQV tCE OE = VIL 90 100 ns Page Read Cycle Time — tPRC —25 30 ns Page Address to Output Delay — tPACC CE = VIL, OE = VIL 25 30 ns Output Enable to Output Delay tGLQV tOE — 25 30 ns Chip Enable to Output High-Z tEHQZ tDF — 25 30 ns Output Enable Hold Time Read —tOEH —0 0 ns Toggle and Data Polling — 10 10 ns Output Enable to Output High-Z tGHQZ tDF — 25 30 ns Output Hold Time From Addresses, CE or OE, Whichever Occurs First tAXQX tOH —0 0 ns RESET Pin Low to Read Mode — tREADY — 20 20 µs Test Conditions CL 3.3 V Diode = 1N3064 or Equivalent 2.7 k Ω Device Under Test Diode = 1N3064 or Equivalent 6.2 k Ω |
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