MBM29PL64LM datasheet(19/69 Pages) SPANSION

19 / 69 page

MBM29PL64LM90/10

Common Flash Memory Interface Code

(Continued)

A0 to A6

DQ0 to DQ15

Description

10h

11h

12h

0051h

0052h

0059h

Query-unique ASCII string “QRY”

13h

14h

0002h

0000h

Primary OEM Command Set

(02h = Fujitsu standard)

15h

16h

0040h

0000h

Address for Primary Extended Table

17h

18h

0000h

Alternate OEM Command Set

(00h = not applicable)

19h

1Ah

0000h

Address for Alternate OEM Extended Table

(00h = not applicable)

1Bh

0027h

VCC Min (write/erase)

DQ7 to DQ4: 1 V/bit,

DQ3 to DQ0: 100 mV/bit

1Ch

0036h

VCC Max (write/erase)

DQ7 to DQ4: 1 V/bit,

DQ3 to DQ0: 100 mV/bit

1Dh

0000h

VPP Min voltage (00h = no Vpp pin)

1Eh

0000h

VPP Max voltage (00h =no Vpp pin)

1Fh

0007h

Typical timeout per single write 2N

µs

20h

0007h

Typical timeout for Min size buffer write 2N

µs

21h

000Ah

Typical timeout per individual sector erase 2N ms

22h

0000h

Typical timeout for full chip erase 2N ms

23h

0001h

Max timeout for write 2N times typical

24h

0005h

Max timeout for buffer write 2N times typical

25h

0004h

Max timeout per individual sector erase 2N times typical

26h

0000h

Max timeout for full chip erase 2N times typical

27h

0017h

Device Size = 2N byte

28h

29h

0002h

0000h

Flash Device Interface description

02h :

× 8/ × 16

2Ah

2Bh

0005h

0000h

Max number of byte in multi-byte write = 2N

2Ch

0002h

Number of Erase Block Regions within device (02h = Boot)

2Dh

2Eh

2Fh

30h

007Fh

0000h

0020h

0000h

Erase Block Region 1 Information

31h

32h

33h

34h

003Eh

0000h

0001h

Erase Block Region 2 Information

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