AP6503A

Document number: DS36000 Rev. 4 - 2

4 of 15

www.diodes.com

March 2017

© Diodes Incorporated

AP6503A

Symbol

Parameter

Rating

Unit

Junction to Ambient

74

°C/W

Junction to Case

16

°C/W

Note:

6. Test condition: SO-8EP: Device mounted on 1" x 1" FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and

thermal vias to bottom layer ground plane.

Symbol

Parameter

Min

Max

Unit

Supply Voltage

4.75

23

V

Operating Ambient Temperature Range

-40

+85

°C

Note:

7. The device function is not guaranteed outside of the recommended operating conditions.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Shutdown Supply Current

—

0.3

3.0

µA

Supply Current (Quiescent)

—

0.6

1.5

mA

High-Side Switch On-Resistance (Note 8)

—

—

100

—

mΩ

Low-Side Switch On-Resistance (Note 8)

—

—

100

—

mΩ

Peak HS Current Limit

cycle

—

5.5

—

A

Valley LS Current Limit

Source

—

0.9

—

A

High-Side Switch Leakage Current

—

0

10

μA

AVEA

Error Amplifier Voltage Gain

(Note 8)

—

—

800

—

V/V

GEA

Error Amplifier Transconductance

—

1,000

—

µA/V

GCS

COMP to Current Sense

Transconductance

—

—

2.8

—

A/V

Oscillator Frequency

210

240

260

kHz

Fold-back Frequency

—

80

—

kHz

Maximum Duty Cycle

—

90

—

%

Minimum On Time

—

—

130

—

ns

Feedback Voltage

900

925

950

mV

OVP

Feedback Overvoltage Threshold

—

—

1.1

—

V

EN Rising Threshold

—

0.7

0.8

0.9

V

EN Lockout Threshold Voltage

—

2.2

2.5

2.7

V

EN Lockout Hysteresis

—

220

mV

—

3.80

4.05

4.40

V

—

—

250

—

mV

Soft-Start Current

—

6

—

μA

Soft-Start Period

—

15

—

ms

Thermal Shutdown (Note 8)

—

—

+160

—

°C

Note:

8. Guaranteed by design.