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P0460ETFAS 데이터시트(PDF) 4 Page - NIKO SEMICONDUCTOR CO., LTD. |
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P0460ETFAS 데이터시트(HTML) 4 Page - NIKO SEMICONDUCTOR CO., LTD. |
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4 / 4 page ![]() REV 1.0 4 G-30-2 N-Channel Enhancement Mode Field Effect Transistor P0460ETFA:TO-220F P0460ETFAS:TO-220FS Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] 0 2 4 6 8 10 0 3 6 9 12 15 VDS=480V ID=4A 25℃ 150℃ 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 DC 100ms 10ms 1ms 0.01 0.1 1 10 100 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25 ˚C 3.R θJC = 3.4˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0 100 200 300 400 500 0.001 0.01 0.1 1 10 100 Single Pulse R θJC = 3.4 ˚C/W TC=25 ˚C Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.4 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC |
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