P0460ETFAS datasheet(1/4 Pages) NIKOSEM

부품명	P0460ETFAS

상세설명	N-Channel Enhancement Mode Field Effect Transistor

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REV 1.0

1

G-30-2

N-Channel Enhancement Mode

Field Effect Transistor

P0460ETFA:TO-220F

P0460ETFAS:TO-220FS

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

±30

V

Continuous Drain Current

2

TC = 25 °C

ID

4

A

TC = 100 °C

2.5

Pulsed Drain Current

1 , 2

IDM

20

Avalanche Current

3

IAS

2

Avalanche Energy

3

EAS

20

mJ

Power Dissipation

TC = 25 °C

PD

36.8

W

TC = 100 °C

14.7

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

3.4

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed

3VDD = 50V , L = 10mH ,starting TJ = 25˚C

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

600

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2

2.8

4

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±100

nA

Gate Voltage Drain Current

IDSS

VDS = 600V, VGS = 0V , TC = 25 °C

1

A

VDS = 480V, VGS = 0V , TC = 100 °C

10

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

600V

2.5Ω

4A

G

D

S

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P0460ETFAS 데이터시트(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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유사한 부품 번호 - P0460ETFAS

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