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CMT2N7000
SMALL SIGNAL MOSFET
2002/10/07
Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT2N7000
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 10 μA)
V(BR)DSS
60
V
Drain-Source Leakage Current
(VDS = 48 V, VGS = 0 V)
(VDS = 48 V, VGS = 0 V, TJ = 125℃)
IDSS
1.0
1.0
μ
A
mA
Gate-Source Leakage Current-Forward
(Vgsf = 15 V, VDS = 0 V)
IGSSF
-10
nA
Gate Threshold Voltage *
(VDS = VGS, ID = 1.0 mA)
VGS(th)
0.8
3.0
V
Static Drain-Source On-Resistance *
(VGS = 10 V, ID = 0.5A)
RDS(on)
5.0
Ω
Drain-Source On-Voltage *
(VGS = 10 V, ID = 0.5A)
VDS(on)
2.5
V
On-State Drain Current *
(VGS = 5 V, VDS = 10 V)
Id(on)
60
mA
Forward Transconductance (VDS = 10 V, ID = 200mA) *
gFS
100
mmhos
Input Capacitance
Ciss
60
pF
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
5.0
pF
Turn-On Delay Time
td(on)
10
ns
Turn-Off Delay Time
(VDD = 15 V, ID = 500 mA,
Vgen = 10 V, RG = 25Ω, RL = 30Ω) *
td(off)
10
ns
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
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