CMT2N7000
SMALL SIGNAL MOSFET
2002/10/07
Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring
up to 200mA DC and can deliver pulsed currents up to
500mA. This product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
!
High Density Cell Design for Low RDS(ON)
!
Voltage Controlled Small Signal Switch
!
Rugged and Reliable
!
High Saturation Current Capability
PIN CONFIGURATION
SYMBOL
TO-92
Top View
1
23
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
CMT2N7000
TO-92
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS = 1.0MΩ)
VDGR
60
V
Drain to Current － Continuous
－
Pulsed
ID
IDM
200
500
mA
Gate-to-Source Voltage － Continue
－
Non-repetitive
VGS
VGSM
±20
±40
V
V
Total Power Dissipation
Derate above 25℃
PD
350
2.8
mW
mW/℃
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
℃
Thermal Resistance － Junction to Ambient
θJA
357
℃
/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
TL
300
℃
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
