SM7311DHKP

Copyright © Sinopower Semiconductor Inc.

Rev. A.1 - November, 2018

www.sinopowersemi.com

3

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Unit

Static Characteristics

100

-

-

V

Zero Gate Voltage Drain Current

-

-

1

m

A

-

-

30

1

2

3

V

Gate Leakage Current

-

-

±10

m

A

-

16.1

19.3

mW

-

20

26

Diode Characteristics

Diode Forward Voltage

-

0.8

1.3

V

Reverse Recovery Time

-

38

-

ns

Reverse Recovery Charge

-

58

-

nC

Gate Resistance

-

2

-

W

Input Capacitance

Frequency=1.0MHz

-

1150 1500

pF

Output Capacitance

-

180

-

Reverse Transfer Capacitance

-

28

-

Turn-on Delay Time

-

14

26

ns

Turn-on Rise Time

-

7

13

Turn-off Delay Time

-

32

58

Turn-off Fall Time

-

31

56

Total Gate Charge

-

24

34

nC

Total Gate Charge

-

12

-

Gate-Source Charge

-

4.3

-

Gate-Drain Charge

-

5.4

-

Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%.

Note e：Guaranteed by design, not subject to production testing.