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SM7311DHKP 데이터시트(PDF) 2 Page - Sinopower Semiconductor Inc |
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SM7311DHKP 데이터시트(HTML) 2 Page - Sinopower Semiconductor Inc |
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2 / 11 page ![]() SM7311DHKP Copyright © Sinopower Semiconductor Inc. Rev. A.1 - November, 2018 www.sinopowersemi.com Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) 2 Symbol Parameter Rating Unit VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25°C 13 A ID Continuous Drain Current TC=25°C 27 TC=100°C 16.4 IDM a Pulse Drain Current TC=25°C 100 A PD Maximum Power Dissipation TC=25°C 30 W TC=100°C 11 RqJC Thermal Resistance-Junction to Case 4.2 °C/W ID Continuous Drain Current TA=25°C 5.8 A TA=70°C 4.6 PD Maximum Power Dissipation TA=25°C 1.39 W TA=70°C 0.89 RqJAc Thermal Resistance-Junction to Ambient Steady State 90 °C/W IAS b Avalanche Current, Single pulse L=0.5mH 15 A EAS b Avalanche Energy, Single pulse L=0.5mH 56 mJ Note a:Pulse width is limited by max. junction temperature. Note b:UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Note c:Surface Mounted on 1in2 pad area. |
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