| 전자부품 데이터시트 검색엔진 |
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L6710 데이터시트(PDF) 25 Page - STMicroelectronics |
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L6710 데이터시트(HTML) 25 Page - STMicroelectronics |
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25 / 34 page ![]() 25/34 L6710 after the pin and connected through Rg to the sense point (see Fig. 17). The PCB traces connecting these resistors to the reading point must be routed as parallel traces in order to avoid the pick-up of any common mode noise. It's also important to avoid any offset in the measurement and to get a better pre- cision, to connect the traces as close as possible to the sensing elements, dedicated current sense re- sistor or low side mosfet RdsON. Moreover, when using the low side mosfet RdsON as current sense element, the ISENx pin is practically connected to the PHASEx pin. DO NOT CONNECT THE PINS TOGETHER AND THEN TO THE HS SOURCE! The device won't work properly because of the noise generated by the return of the high side driver. In this case route two separate nets: connect the PHASEx pin to the HS Source (route together with HGATEx) with a wide net (30 mils) and the ISENx pin to the LS Drain (route together with PGNDS). Moreover, the PGNDS pin is always connected, through the Rg resistor, to the PGND: DO NOT CON- NECT DIRECTLY TO THE PGND! In this case the device won't work properly. Route anyway to the LS mosfet source (together with ISENx net). Right and wrong connections are reported in Figure 18. Symmetrical layout is also suggested to avoid any unbalance between the two phases of the converter. Figure 18. PCB layout connections for sense nets. EMBEDDING L6710-BASED VRMs… When embedding the VRM into the application, additional care must be taken since the whole VRM is a switching DC/DC regulator and the most common system in which it has to work is a digital system such as MB or similar. In fact, latest MB has become faster and powerful: high speed data bus are more and more common and switching-induced noise produced by the VRM can affect data integrity if not following additional layout guidelines. Few easy points must be considered mainly when routing traces in which switching high currents flow (switching high currents cause voltage spikes across the stray inductance of the traces causing noise that can affect the near traces): – When reproducing high current path on internal layers, please keep all layers the same size in order to avoid "surrounding" effects that increases noise coupling. – Keep safe guarding distance between high current switching VRM traces and data buses, especially if high-speed data bus to minimize noise coupling. – Keep safe guard distance or filter properly when routing bias traces for I/O sub-systems that must walk near the VRD. – Possible causes of noise can be located in the PHASE connections, Mosfet gate drive and Input volt- age path (from input bulk capacitors and HS drain). Also PGND connections must be considered if not insisting on a power ground plane. These connections, that can be possible sources of noise, must be carefully kept far away from noise-sensitive data bus. To LS Drain and Source (or Sense Resistor) To HS Gate and Source (30 mils wide) To HS Source VIA to GND Plane NOT CORRECT CORRECT |
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