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GTRA384802FC-V1-R2 데이터시트(PDF) 2 Page - Cree, Inc

부품명 GTRA384802FC-V1-R2
상세설명  Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
PDF  5 Pages
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제조업체  CREE [Cree, Inc]
홈페이지  http://www.cree.com/
Logo CREE - Cree, Inc

GTRA384802FC-V1-R2 데이터시트(HTML) 2 Page - Cree, Inc

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 01, 2019-01-23
2
Advance GTRA384802FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-source Breakdown Voltage (main)
VGS = –8 V, ID = 10 mA
V(BR)DSS
150
V
(peak)
VGS = –8 V, ID = 10 mA
V(BR)DSS
150
V
Drain-source Leakage Current
VGS = –8 V, VDS = 10 V
IDSS
5
mA
Gate Threshold Voltage (main)
VDS = 10 V, ID = 10 mA
VGS(th)
–3
V
(peak)
VDS = 10 V, ID = 10 mA
VGS(th)
–3
V
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Drain Operating Voltage
VDD
0
50
V
Gate Quiescent Voltage
VDS = 48 V, ID = 250 mA
VGS(Q)
–3
V
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS
125
V
Gate-source Voltage
VGS
–10 to +2
V
Gate Current (main)
IG
25.2
mA
(peak)
IG
36
mA
Drain Current (main)
ID
9.5
A
(peak)
ID
13.5
A
Junction Temperature
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values
may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For
reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above.
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance
RqJC
TBD
°C/W
Ordering Information
Type and Version
Order Code
Package Description
Shipping
GTRA384802FC V1 R0
TBD
H-37248C-4
Tape & Reel, 50 pcs
GTRA384802FC V1 R2
TBD
H-37248C-4
Tape & Reel, 250 pcs



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