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GTRA384802FC-V1-R2 데이터시트(PDF) 3 Page - Cree, Inc

부품명 GTRA384802FC-V1-R2
상세설명  Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
PDF  5 Pages
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제조업체  CREE [Cree, Inc]
홈페이지  http://www.cree.com/
Logo CREE - Cree, Inc

GTRA384802FC-V1-R2 데이터시트(HTML) 3 Page - Cree, Inc

  GTRA384802FC-V1-R2 Datasheet HTML 1Page - Cree, Inc GTRA384802FC-V1-R2 Datasheet HTML 2Page - Cree, Inc GTRA384802FC-V1-R2 Datasheet HTML 3Page - Cree, Inc GTRA384802FC-V1-R2 Datasheet HTML 4Page - Cree, Inc GTRA384802FC-V1-R2 Datasheet HTML 5Page - Cree, Inc  
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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 01, 2019-01-23
3
Advance GTRA384802FC
Lead connections for GTRA384802FC
Pinout Diagram (top view)
H-37248-4_pd_10-10-2012
S
D1
D2
G1
G2
Pin
Description
D1
Drain Device 1 (Main)
D2
Drain Device 2 (Peak)
G1
Gate Device 1 (Main)
G2
Gate Device 2 (Peak)
S
Source (flange)
Main
Peak



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