IRL510-513

N-Channel Power Mosfets

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3

Electrical Characteristics

(Cont.) (Tc=25℃ unless otherwise noted)

Symbol

Characteristic

Typ

Max

Unit

Test Conditions

Source-Drain Diode Characteristics

2.5

Diode Forward Voltage

IRF510/511

IRF512/513

2.0

V

trr

Reverse Recovery Time

230

ns

Notes

1.

2.

Pulse test; Pulse width ≤80µs, Duty cycle ≤1%

3.

Switching time measurements performed on LEM TR-58 test equipment

Typical Performance Curves

Figure 1 Output Characteristics

Figure 3 Transfer Characteristics

Figure 2 Static Drain to Source Resistance

vs Drain Current

Figure 4 Temperature Variation of Gate to Source Threshold

Voltage